Near-field light emission from semiconductor macroatoms

Savasta, S. and Pistone, G. and Di Stefano, O. and Martino, G. and Girlanda, R. (2008) Near-field light emission from semiconductor macroatoms. Il nuovo cimento C, 31 (4). pp. 435-443. ISSN 1826-9885

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We present a microscopic theoretical analysis of time and spatially resolved photoluminescence of naturally occurring quantum dots induced by monolayer fluctuations in the thickness of semiconductor quantum wells. In particular we study the carrier dynamics and the emission properties of a semiconductor quantum dot under both continuous-wave and pulsed excitations resonant with the barrier energy levels. We show that collection-mode near-field optical microscopy allows the detection of light emission from excitonic dark states. We find that, at low temperature, the second (dark) energy level displays a carrier density significantly larger than that of the lowest energy level. This behaviour is a consequence of carrier trapping due to the symmetry-induced suppression of radiative recombination.

Item Type: Article
Uncontrolled Keywords: Near-field scanning microscopy and spectroscopy ; Excitons and related phenomena ; Quantum dots ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Subjects: 500 Scienze naturali e Matematica > 530 Fisica
Depositing User: Marina Spanti
Date Deposited: 23 Mar 2020 16:41
Last Modified: 23 Mar 2020 16:41

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