Toschkoff, G. and Ossig, G. and Lichtenberger, P. and Zojer, K. and Schürrer, F. (2010) A Schr¨odinger-Poisson-Boltzmann system applied to the charge carrier transport in strained silicon. Il nuovo cimento C, 33 (1). pp. 239-246. ISSN 1826-9885
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Abstract
In this paper, a kinetic modeling of the electron transport inside a strained-silicon device structure is established. The reduced conduction band energy of a strained layer gives rise to a potential well structure, which may have a varying bottom energy. Electrons are introduced into the well by remote antimony doping, where they form a two-dimensional electron gas. Quantum-mechanical aspects are treated by using a self-consistent Schr¨odinger-Poisson block (subband model). To account for the transport properties of the strained-silicon device structure, an adapted semi-classical formulation of the Boltzmann transport equation is applied. This approach allows us to consistently include the relevant scattering mechanisms. The resulting coupled Schr¨odinger-Poisson-Boltzmann system is used for a phononlimited mobility estimate.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Electronic transport in mesoscopic systems |
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica > 537 Elettricita' ed Elettronica > 537.5 Elettronica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 31 Mar 2020 15:43 |
| Last Modified: | 31 Mar 2020 15:43 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/16820 |
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