Vanacore, G. M. (2012) Strain-induced work function changes in Ge nano-stripes on Si(001) studied by energy-filtered photoelectron emission microscopy. Il nuovo cimento C, 35 (5). pp. 49-58. ISSN 1826-9885
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Abstract
Investigation of Ge nanostructures on Si(001) is of great interest for high-mobility Ge MOSFETs and potential applications in near-infrared photodetection. In this paper the experimental investigation of the strain state of Ge nano-stripes fabricated by selective epitaxial growth of Ge on a Si(001) substrate patterned with 100nm wide trenches is presented. Energy-filtered photoelectron emission microscopy has been used to spatially map with nanoscale resolution the strain-induced change in the electron work function of the nano-stripes. Strain information has been obtained by comparing the experimentally measured work function with a simple model developed within the framework of the potential deformation theory. A tensile deformation of ∼ 0.4% has been found in the nano-stripes. The origin of this strain state is attributed to the joint contribution of the plastic relaxation induced by misfit dislocations and the coherency constraints imposed by the Si substrate, as supported by finite element method (FEM) simulations.
| Item Type: | Article |
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| Additional Information: | Present address: Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena (CA), United States. |
| Uncontrolled Keywords: | Interfaces; heterostructures; nanostructures ; Surface double layers, Schottky barriers, and work functions ; Strain-induced splitting ; Complex nanostructures, including patterned or assembled structures |
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 24 Apr 2020 16:02 |
| Last Modified: | 24 Apr 2020 16:02 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/17929 |
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