Coletti, C. (2014) Revealing the electronic band structure of trilayer graphene on SiC. Il nuovo cimento C, 37 (4). pp. 93-100. ISSN 1826-9885
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Abstract
Recently, a great deal of attention has been devoted to trilayer graphene because it displays stacking and electric-field–dependent electronic properties well-suited for electronic and photonic applications. Several theoretical studies have predicted the electronic dispersion of Bernal (ABA) and rhombohedral (ABC) stacked trilayers. However, a direct experimental visualization of a well-resolved band structure has not yet been reported. In this work, angle resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene on 6H-SiC(0001) are presented. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. The presented results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
| Item Type: | Article |
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| Uncontrolled Keywords: | Electronic structure of graphene ; Graphene ; Structure of graphene |
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 19 May 2020 15:58 |
| Last Modified: | 19 May 2020 15:58 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/18641 |
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