Mezzapesa, F. P. (2015) Mapping the charge carrier density in semiconductors by THz-QCL based optical feedback interferometry. Il nuovo cimento C, 38 (2). pp. 1-7. ISSN 1826-9885
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Official URL: https://www.sif.it/riviste/sif/ncc/econtents/2015/...
Abstract
A THz imaging system based on self-mixing (SM)interferometry in a Quantum Cascade Laser (QCL) is developed to map the distribution of free charges on a semiconductor surface. In the experiment, a free electron plasma is photo-generated in a high resistivity n-type silicon wafer using a near-infrared (NIR)continuous-wave (CW) pump laser. A model based on Drude theory correctly reproduces the experimental results and in prospective promises a quantitative evaluation of the free charges density.
| Item Type: | Article |
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| Uncontrolled Keywords: | Infrared sources ; Imaging and optical processing ; Interference |
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 27 May 2020 15:21 |
| Last Modified: | 27 May 2020 15:21 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/19001 |
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