LNL irradiation facilities for radiation damage studies on electronic devices

Bisello, D. and Candelori, A. and Giubilato, P. and Mattiazzo, S. and Pantano, D. and Silvestrin, L. and Tessaro, M. and Wyss, J. (2015) LNL irradiation facilities for radiation damage studies on electronic devices. Il nuovo cimento C, 38 (6). pp. 1-5. ISSN 1826-9885

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In this paper we will review the wide range of irradiation facilities installed at the INFN Legnaro National Laboratories and routinely used for radiation damage studies on silicon detectors, electronic components and systems. The SIRAD irradiation facility, dedicated to Single Event Effect (SEE) and bulk damage studies, is installed at the 14MV Tandem XTU accelerator and can deliver ion beams from H up to Au in the energy range from 28MeV to 300 MeV. An Ion Electron Emission Microscope, also installed at SIRAD, allows SEE testing with micrometric sensitivity. For total dose tests, two facilities are presently available: an X-rays source and a 60Co γ-ray source. The 7MV Van de Graaff CN accelerator provides 1H beams in the energy range 2–7MeV and currents up to few μA for both total dose and bulk damage studies. At this facility, very high dose rates (up to ∼100 krad/s (SiO2)) can be achieved. Finally, also neutron beams are available, produced at the CN accelerator, by the reaction d + Be ⇒ n+B.

Item Type: Article
Uncontrolled Keywords: Radiation effects on semiconductors; Ion irradiation effects; X-ray effects
Subjects: 500 Scienze naturali e Matematica > 530 Fisica
Depositing User: Marina Spanti
Date Deposited: 23 Jun 2020 09:47
Last Modified: 23 Jun 2020 09:47
URI: http://eprints.bice.rm.cnr.it/id/eprint/19179

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