Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures

Sledz, F. and Piccolomo, S. and Flatae, A. M. and Lagomarsino, S. and Rechenberg, R. (2021) Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures. Il nuovo cimento C, 44 (4-5). pp. 1-4. ISSN 1826-9885

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Abstract

Phosphorus-doped diamond is relevant for applications in sensing,optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100◦ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on temperature, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in optical-grade single-crystal diamond.

Item Type:	Article
Subjects:	500 Scienze naturali e Matematica > 530 Fisica
Depositing User:	Marina Spanti
Date Deposited:	20 Sep 2021 09:47
Last Modified:	20 Sep 2021 09:47
URI:	http://eprints.bice.rm.cnr.it/id/eprint/21348

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