Giannazzo, F. and Schiliro`, E. and Greco, G. and Cordier, Y. and Roccaforte, F. (2022) Towards ballistic vertical transistors by graphene integration with nitride semiconductors. Il nuovo cimento C, 45 (6). pp. 1-4. ISSN 1826-9885
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Abstract
2D materials integration with group III-nitride semiconductors is currently explored as a platform for novel optoelectronic and ultra-high frequency electronic devices and sensors. In this paper, the Schottky junction formed by graphene and AlGaN/GaN heterostructures has been used as the building block of a graphene-base hot electron transistor potentially able to operate in the THz frequency regime.
| Item Type: | Article |
|---|---|
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 06 Sep 2022 13:14 |
| Last Modified: | 06 Sep 2022 13:14 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/22059 |
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