Fanelli, Fiorenza and Fracassi, Francesco and d'Agostino, Riccardo (2010) Deposition and etching of fluorocarbon thin films in atmospheric pressure DBDs fed with Ar–CF4–H2 and Ar–CF4–O2 mixtures. Surface and Coatings Technology, 204 (11). pp. 1779-1784. ISSN 02578972
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Abstract
The deposition and etching of plasma-polymerized fluorocarbon thin films were studied in filamentary dielectric barrier discharges (FDBDs) fed with Ar–CF4–H2 and Ar–CF4–O2 mixtures, respectively. The etching/ polymerization competition was investigated as a function of the feed composition. Hydrogen addition to CF4 promotes thin films deposition, with a maximum deposition rate at 20% H2, and reduces the F/C ratio of the deposit, while the oxygen addition promotes the etching of the plasma-deposited film. It is demonstrated that fluorine atoms can perform the etching of the fluoropolymer also without ion bombardment. The correlation between the trend of the etch rate and the trend of the surface chemical composition of fluoropolymers etched in Ar–CF4–O2 mixtures allows to enhance hypotheses on the reaction mechanism and on the role of the different active species involved in plasma–surface interactions.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Atmospheric pressure cold plasma; Dielectric barrier discharge; Fluorocarbon film; Plasma-enhanced chemical vapour deposition; Etching |
| Subjects: | 500 Scienze naturali e Matematica > 500.2 Scienze fisiche 500 Scienze naturali e Matematica > 540 Chimica e scienze connesse |
| Depositing User: | Fiorenza Fanelli |
| Date Deposited: | 26 Jan 2024 14:45 |
| Last Modified: | 26 Jan 2024 14:45 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/22644 |
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