Investigation of dopant profiles in nanosized materials by scanning transmission electron microscopy

Merli, P. G. and Morandi, V. and Migliori, A. and Baratto, C. and Comini, E. and Faglia, G. and Ferroni, Matteo and Ponzoni, A. and Poli, N. and Sberveglieri, G. (2004) Investigation of dopant profiles in nanosized materials by scanning transmission electron microscopy. Il nuovo cimento C, 27 (5). pp. 467-472. ISSN 1826-9885

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Abstract

Scanning electron microscopy is capable to provide chemical information on specimens interesting for the field of materials science and nanotechnology. The spatial resolution and the chemical information provided by incoherent imaging and detection of transmitted, forward-scattered electrons can reveal useful information about the specimen composition and microstructure. This paper discusses the capability and potential of low-voltage Scanning Transmission Electron Microscopy (STEM) for the characterization of multilayered structures and dopant profiles in crystalline materials.

Item Type: Article
Uncontrolled Keywords: Scanning electron microscopy (SEM) (including EBIC) ; Impurity doping, diffusion and ion implantation technology ; Impurity concentration, distribution, and gradients
Subjects: 500 Scienze naturali e Matematica > 530 Fisica
Depositing User: Marina Spanti
Date Deposited: 14 Mar 2020 12:06
Last Modified: 14 Mar 2020 12:06
URI: http://eprints.bice.rm.cnr.it/id/eprint/15258

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