Perspectives and advantages of the use of excimer laser annealing for MOS technology

Privitera, V. and Alippi, P. and Camalleri, M. and Cuscunà, M. and Fortunato, G. and La Magna, A. and La Rosa, G. and Magrì, A. and Mariucci, L. and Monakhov, E. and Salinas, D. and Simon, F. and Spinella, C. and Svensson, B. G. (2006) Perspectives and advantages of the use of excimer laser annealing for MOS technology. Il nuovo cimento C, 29 (3). pp. 369-379. ISSN 1826-9885

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The integration of excimer laser annealing (ELA) into the MOS device technology has been studied and evaluated within the frame of the IST project FLASH (Fundamentals and applications of laser processing for highly innovative MOS technology), funded by the European Commission. The final aim of the project was to demonstrate that ELA can be applied as a reliable, effective and advantageous process in the context of semiconductor device fabrication. Some of the results of this activity are summarised, relative to the experimental characterization and theoretical modelling. The electrical characterization of the transistor fabricated by ELA is also presented, showing a device yield of 90% on wafer.

Item Type: Article
Uncontrolled Keywords: Ultraviolet, visible, and infrared radiation effects (including laser radiation) ; Doping and impurity implantation in germanium and silicon ; Field effect devices ; Semiconductor-device characterization, design, and modeling
Subjects: 500 Scienze naturali e Matematica > 530 Fisica
Depositing User: Marina Spanti
Date Deposited: 19 Mar 2020 14:17
Last Modified: 19 Mar 2020 14:17

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