Caselle, M. and Manzari, V. and Snoeys, W. (2009) A monolithic pixel detector for future HEP experiments. Il nuovo cimento C, 32 (3\4). pp. 391-395. ISSN 1826-9885
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Abstract
A new idea of a monolithic pixel detector design in a very deepsubmicron commercial standard CMOS technology (90 nm) will be presented. The design is based on a lightly doped substrate to obtain a sufficiently thick depletion layer for the detecting element. In particular, the new detecting element is implemented on the same substrate of the innovative analog front-end electronics and the digital architecture to extract and manage the hit information from the pixel cells. The work described in this contribution is the result of a collaboration between INFN, CERN, IN2P3—Strasbourg and C4iMIND (Conseil General de la Haute Savoie).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Fabrication techniques; lithography, pattern transfer |
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 26 Mar 2020 20:29 |
| Last Modified: | 26 Mar 2020 20:29 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/16695 |
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