Muscato, O. and Di Stefano, V. (2010) A statistical enhancement method for Direct Simulation Monte Carlo in semiconductor devices. Il nuovo cimento C, 33 (1). pp. 181-188. ISSN 1826-9885
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Abstract
The Multicomb variance reduction technique has been introduced in the Direct Simulation Monte Carlo for submicrometric semiconductors. We have implemented the method in a silicon diode n+ − n − n+ and demonstrated its effectiveness. The steady-state statistical error and the figures of merit are obtained. The results of the simulations indicate that the method can enhance the high-energy distribution tail with a good accuracy.
| Item Type: | Article |
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| Uncontrolled Keywords: | Conductivity phenomena in semiconductors and insulators ; Monte Carlo methods ; Semiconductor devices |
| Subjects: | 500 Scienze naturali e Matematica > 510 Matematica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 31 Mar 2020 15:38 |
| Last Modified: | 31 Mar 2020 15:38 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/16813 |
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