Planar channeling of electrons: Numerical analysis and theory

Kostyuk, A. and Korol, A. V. and Solov'yov, A. V. and Greiner, W. (2011) Planar channeling of electrons: Numerical analysis and theory. Il nuovo cimento C, 34 (4). pp. 167-174. ISSN 1826-9885

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Monte Carlo results on electron channeling in silicon are presented. The simulation has been done with a new computer code that takes into account the detailed atomic structure of the crystal. The dechanneling lengths for (100), (110) and (111) crystallographic planes are estimated. The calculated dependence of the intensity of the channeling radiation on the crystal length demonstrats a good agreement with recent experimental data.

Item Type: Article
Uncontrolled Keywords: Channeling phenomena (blocking, energy loss, etc.) ; Applications of Monte Carlo methods
Subjects: 500 Scienze naturali e Matematica > 530 Fisica
Depositing User: Marina Spanti
Date Deposited: 07 Apr 2020 16:22
Last Modified: 07 Apr 2020 16:22

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