Kostyuk, A. and Korol, A. V. and Solov'yov, A. V. and Greiner, W. (2011) Planar channeling of electrons: Numerical analysis and theory. Il nuovo cimento C, 34 (4). pp. 167-174. ISSN 1826-9885
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Official URL: https://www.sif.it/riviste/sif/ncc/econtents/2011/...
Abstract
Monte Carlo results on electron channeling in silicon are presented. The simulation has been done with a new computer code that takes into account the detailed atomic structure of the crystal. The dechanneling lengths for (100), (110) and (111) crystallographic planes are estimated. The calculated dependence of the intensity of the channeling radiation on the crystal length demonstrats a good agreement with recent experimental data.
Item Type: | Article |
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Uncontrolled Keywords: | Channeling phenomena (blocking, energy loss, etc.) ; Applications of Monte Carlo methods |
Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
Depositing User: | Marina Spanti |
Date Deposited: | 07 Apr 2020 16:22 |
Last Modified: | 07 Apr 2020 16:22 |
URI: | http://eprints.bice.rm.cnr.it/id/eprint/17329 |
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