Caselle, M. and Chalmet, P. and Dorokhov, A. and Kloukinas, K. and Mugnier, H. and Rivetti, A. and Rousset, J. and Snoeys, W. (2010) Recent developments of a monolithic silicon pixel detector on moderate resistivity substrates. Il nuovo cimento C, 33 (6). pp. 225-227. ISSN 1826-9885
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Abstract
This paper is focused on the recent submission of a novel monolithic pixel detector developed in standard 90nm CMOS deep sub-micron technology on wafers with moderate resistivity. This option, offered by some silicon foundries, allows to implement monolithic sensors for particle tracking that combine the low power consumption and material budget offered by monolithic active pixel sensors (MAPS) with the speed and radiation hardness characterizing hybrid pixel detectors. Seven ASICs have been submitted in March 2010 containing transistor test structures, a large diode, breakdown test structures and four pixel matrices produced both on standard substrates and on higher resistivity wafers.
| Item Type: | Article |
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| Uncontrolled Keywords: | Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology ; Solid-state detectors |
| Subjects: | 500 Scienze naturali e Matematica > 530 Fisica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 03 Apr 2020 14:01 |
| Last Modified: | 03 Apr 2020 14:01 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/17125 |
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