Optoelectronic characterization of NIR photodetectors based on Ge-on-Si microcrystals and microcrystal arrays

Falcone, V. (2022) Optoelectronic characterization of NIR photodetectors based on Ge-on-Si microcrystals and microcrystal arrays. Il nuovo cimento C, 45 (6). pp. 1-4. ISSN 1826-9885

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Abstract

We report on the electro-optical characterization of Ge-on-Si microcrystals grown on Si patterned substrates, that can be used as absorbing elements for photodetection in the near-infrared (NIR). In such microstructures, light confinement effects, due to crystal faceting and pattern periodicity, enhance light absorption as compared to conventional epitaxial layers. By means of current-voltage and photoresponse measurements, performed on single microcrystals, we have investigated the optoelectronic properties of individual microcrystals and compared them with those of microcrystal arrays connected by a suspended graphene layer and those of a planar reference device. Microcrystal-based devices show enhanced photoresponse in the 1550–1700 nm spectral range, as compared with planar devices, in agreement with finite difference time domain (FDTD) simulations of light-trapping effects in such microstructures.

Item Type:	Article
Subjects:	500 Scienze naturali e Matematica > 530 Fisica
Depositing User:	Marina Spanti
Date Deposited:	20 Sep 2022 09:28
Last Modified:	20 Sep 2022 09:28
URI:	http://eprints.bice.rm.cnr.it/id/eprint/22092

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