Displacement Damage induced in 150 nm CMOS SPADs by 2 MeV electrons

Ponticelli, E. (2022) Displacement Damage induced in 150 nm CMOS SPADs by 2 MeV electrons. Il nuovo cimento C, 45 (6). pp. 1-4. ISSN 1826-9885

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Abstract

This work investigates the degradation induced to 150 nm CMOS Single-Photon Avalanche Diodes (SPADs) by 2 MeV electrons. Radiation-induced damage effects are investigated through a Dark Count Rate (DCR) analysis. Different architectures of CMOS SPADs are tested. Displacement Damage results in lattice defects that lead to a DCR increase mostly due to thermal contributions in most linear-region operating devices. The study reveals an interesting behavior of DCR as a function of both the absorbed dose and the applied voltage. This suggests a strong tunneling contribution to radiation-induced noise, alongside the thermal one, in a peculiar way for Geiger-mode devices such as SPADs.

Item Type:	Article
Subjects:	500 Scienze naturali e Matematica > 530 Fisica
Depositing User:	Marina Spanti
Date Deposited:	20 Sep 2022 10:51
Last Modified:	20 Sep 2022 10:51
URI:	http://eprints.bice.rm.cnr.it/id/eprint/22099

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