Romano, V. and Rusakov, A. (2010) Numerical simulation of coupled electron devices and circuits by the MEP hydrodynamical model for semiconductors with Crystal heating. Il nuovo cimento C, 33 (1). pp. 223-230. ISSN 1826-9885
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Abstract
Solutions of a new 2d semiconductor numerical model describing the electron transport in semiconductors coupled with the heating of the Crystal lattice are presented. The model equations have been obtained with the use of the maximum entropy principle. Numerical simulations of a nanoscale MOSFET and inverter circuit are presented and the influence of self-heating on the electrical characteristics is analyzed.
| Item Type: | Article |
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| Uncontrolled Keywords: | Phonons in crystal lattices ; Computational methods in continuum mechanics ; Nanoelectronic devices ; Multi-scale methods |
| Subjects: | 500 Scienze naturali e Matematica > 510 Matematica |
| Depositing User: | Marina Spanti |
| Date Deposited: | 31 Mar 2020 15:42 |
| Last Modified: | 31 Mar 2020 15:42 |
| URI: | http://eprints.bice.rm.cnr.it/id/eprint/16818 |
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