Preliminary results on monolithic CMOS sensors with gain layer in 110 nm technology for the ALICE 3 experiment

Ferrero, C. and Bufalino, S. and Corradino, T. and Da Rocha Rolo, M. (2025) Preliminary results on monolithic CMOS sensors with gain layer in 110 nm technology for the ALICE 3 experiment. Il nuovo cimento C, 48 (3). pp. 1-6. ISSN 1826-9885

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Abstract

Monolithic Active Pixel Sensors (MAPS) benefit from a cost-effective implementation as they make use of commercial CMOS process, avoiding expensive interconnections to additional front-end ASIC. The ARCADIA collaboration has developed Fully-Depleted MAPS exploiting backside bias voltage to fully deplete the sensor, thereby enhancing charge collection efficiency and timing performance. Recent advancements have explored the introduction of a gain layer in MAPS to design a first monolithic LGAD prototype targeting 20 ps time resolution. The signal multiplication results in a higher signal-to-noise ratio and improved time resolution. This work illustrates preliminary characterization results of monolithic LGAD prototypes with an additional gain layer, based on a 110 nm CMOS technology developed in collaboration with LFoundry for the third run of the ARCADIA project.

Item Type: Article
Subjects: 500 Scienze naturali e Matematica > 530 Fisica
Depositing User: Marina Spanti
Date Deposited: 10 Jul 2025 14:26
Last Modified: 10 Jul 2025 14:26
URI: http://eprints.bice.rm.cnr.it/id/eprint/23641

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